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| Switching Diodes MAS3132E Silicon epitaxial planar type Unit: mm For high-speed switching circuits Features * Two elements are contained in one package, allowing highdensity mounting * Short reverse recovery time trr * Small terminal capacitance Ct * SSS-Mini type 3-pin package 0.33+0.05 -0.02 3 0.10+0.05 -0.02 (0.40) (0.40) 0.800.05 1.200.05 5 0.15 min. 0.23+0.05 -0.02 1 2 0 to 0.01 Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Single Double Peak forward current Single Double Non-repetitive peak Single IFSM Tj Tstg forward surge current * Double Junction temperature Storage temperature Note) *: t = 1 s IFM Symbol VR VRM IF Rating 80 80 100 150 225 340 500 750 150 -55 to +150 C C 1 0.520.03 5 Unit V V mA 1: Anode 1 2: Anode 2 3: Cathode 1, 2 SSSMini3-F1 Package mA Marking Symbol: MU Internal Connection 3 mA 2 Electrical Characteristics Ta = 25C 3C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time * Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 A VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR , RL = 100 80 2 3 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. *: trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 10 mA VR = 6 V RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Wave Form Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.15 max. 0.15 min. 0.800.05 1.200.05 Publication date: July 2002 SKF00065AED 1 MAS3132E IF V F 103 105 I R VR 1.6 Ta = 150C VF T a 1.4 102 104 Forward current IF (mA) Reverse current IR (nA) 100C 103 Forward voltage VF (V) 1.2 1.0 IF = 100 mA 0.8 0.6 0.4 3 mA 0.2 10 1 Ta = 150C 100C 25C 102 25C 10 mA 10-1 -20C 10 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0 20 40 60 80 100 120 0 -40 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) IR T a 105 1.2 VR = 75 V 35 V 6V 1.0 Ct VR 1 000 f = 1 MHz Ta = 25C 300 IF(surge) tW Ta = 25C IF(surge) tW Terminal capacitance Ct (pF) 104 Forward surge current IF(surge) (A) Reverse current IR (nA) 100 30 10 3 1 0.3 Non repetitive 0.8 103 0.6 102 0.4 10 0.2 1 -40 0 0 40 80 120 160 200 0 20 40 60 80 100 120 0.1 0.03 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 SKF00065AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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